ABSTRACT
VZM growth of GaAs yields semi-insulating (SI) material with a low etch pit density (EPD ca. 2–4 × 103). We have used the NaOH-KOH eutectic mixture and the Abrahams-Buiocchi (AB) etch to explore the relationship between defects in GaAs (including precipitates) and crystal growth variables. The correlation of cooling regimes and arsenic overpressure during growth with the nature and distribution of etch-revealed defects and with electrical properties is discussed.
