ABSTRACT
The electron wave interference effect and mobility modulation effect are enhanced in quantum confinement materials, presenting possibilities for such a new device concept. By using the electron wave interference effect, the current is controlled by the interference between incident electron waves and electron waves reflected by the potential in the channel. However, electron wave interference devices with AlAs/GaAs fractional layer superlattices (FLSs) have demonstrated an increases of drain current. Negative transconductance, however, is expected in an FLS quantum wire, which is produced by reducing the channel width of the FLS electron wave interference device to the submicron level. The sidelobes are the reflection peaks resulting from the interference between the incident light wave and the light wave reflected at the gratings. When the path difference between the two light waves is close to an odd multiple of half wavelength, the waves are superposed in opposite phase resulting in the reflection peak.
