ABSTRACT
We have investigated at 1.6 K the Shubnikov de Haas (SdH) magnetoresistance oscillations of Si-modulation-doped, pseudomorphic, Al0.30Ga0.70As/In0.17Ga0.83As heteroepitaxial layers grown on both GaAs and Al0.30Ga0.70As buffers deposited on (100) GaAs substrates by Molecular Beam Epitaxy and also determined their electrical and low field galvanomagnetic properties between 300 K and 1.6 K. A comparison between the total scattering rate relaxation time τ q obtained from the amplitude of the SdH magnetoresistance oscillations, and the conductivity relaxation time τ c, suggests a strong large angle scattering contribution from the buffer interface of In0.17Ga0.83As/Al0.30Ga0.70As.
