Constant temperature growth of uniform-composition In x Ga1−x As bulk crystals by supplying GaAs

Ternary In_0.05Ga_0.95As and In_0.14GaQ_0.86As bulk crystals with a uniform composition were found to be grown at a constant temperature by supplying the depleted solute elements of Ga and As to the growth melt. The pseudo-binary InAs-GaAs melts were used as the growth melts. The Liquid Encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material was used to grow the ternary bulk crystals. Polycrystalline GaAs was used as a source material. 6 mm thick In_0.05Ga_0.95As and 4 mm thick ln_0.14Ga_0.86As single bulk crystals were obtained on the GaAs and In_xGa_1−xAs (0.05 < x < 0.08) seeds by the constant temperature growth through only GaAs supply.