ABSTRACT
Strained, modulation-doped InGaSb/AIGaSb quantum wells were grown on InP substrates by molecular beam epitaxy and characterized by magneto-transport measurements. Hole transport properties were strongly correlated with growth conditions. Shubnikov-de Haas measurements yielded a hole mass of (0.15 ± 0.02) mo, and hole mobilities as high as 3300 cm2/Vs were obtained at 77K, with a density of 1.6×1012 cm−2, thus showing promise for p-type field-effect transistor applications.
