ABSTRACT
This chapter presents the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor (MIS) diode structures. Cubic GaN is a wide bandgap semiconductor with potentially useful applications as an insulator or passivation layer for GaAs-based devices. The quality of the GaN and its interfaces with GaAs was investigated by high resolution transmission electron microscopy. Room temperature I-V measurements on a GaN/GaAs MIS device show the rectifying properties of the diode. In order to improve the quality of the heteroepitaxial GaN, as well as to realize high quality GaAs-GaN semiconductor-insulator structures, it is desirable to obtain two dimensional epitaxy as quickly as possible. Room temperature C-V measurements on GaN-GaAs MIS structures show that the device can be swept from inversion to a possible accumulation state, indicating that the interface Fermi level is unpinned.
