ABSTRACT
Advances in the epitaxial growth of magnetic and magneto-optic materials on compound semiconductors foster progress towards the integration of magnetic devices with optoelectronics. In this study we have investigated the magneto-optic properties and Schottky diode characteristics of epitaxial MBE grown τ MnAl/AlAs/GaAs heterostructures. The ferromagnetic τ phase of MnAl was observed and perpendicular anisotropy was confirmed by the nearly square hysteresis loops and magneto-optic polar Kerr effect. Schottky diode characteristics revealed good quality interfaces and effective barrier heights of 1.03 eV (ideality factor n=1.1) and 0.55 eV (n=1.09) for n and p-type GaAs, respectively. The potential of this material for devices such as photodetectors is discussed.
