ABSTRACT
The first wide band gap II-VI semiconductor laser diodes were recently reported. These devices emit at 490 nm (blue-green) under pulsed current injection at 77 K, and are comprised of CdZnSe single quantum wells in ZnSe-ZnSSe waveguides. Further advances in this technology have resulted in room temperature pulsed operation of green laser diodes. These developments are discussed in light of the difficulties which have historically been presented by the II-VI compounds.
