Influence of the doping position on the performance of high speed AIGaAs/InGaAs HFETS with doped channels

This paper presents a theoretical and experimental investigation on the influence of the doping position on the high speed performance of doped channel HFET’s. As the result of the investigation we propose a new concept for Doped Channel HFETs: the Backside Pulse Doped Channel HFET. Depending on the doping position we measured for 0.35|im gate length transconductances between 400 and 625mS/mm, saturation currents between 720 and 1 l00mA/mm and power gain cut-off frequencies between 90GHz and 195GHz.