ABSTRACT
We report on the fabrication and characterization of GaSb p-channel HFETs (Heterojunction Field-Effect Transistors) based on a vertically integrated (Al.5Ga.5)Sb/InAs/(Al.5Ga.5)Sb/GaSb/(Al.5Ga.5)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The paper mainly deals with the structural design and fabrication considerations of the p-channel HFETs buried under the n-channel HFETs. The operation of the integrated p- and n-channel HFETs has been demonstrated for the first time snowing decent I-V characteristics. Maximum transconductances of the buried p-HFETs ranged 22mS/mm to 50mS/mm at 77K. A p-HFET operation of enhancement mode has been confirmed in the stratified structure, which is an important step toward the realization of the real complementary circuits based on antimonides.
