ABSTRACT
We have developed a technique which improves breakdown voltage of GaAs junction (Schottky or pn junction) by damage-creation of ion-implantation around the junction edge followed by appropriate annealing. Owing to the high-resistive region formed at the surface by ion-implantation, depletion layer is widened laterally in the region, so that the field intensity at the junction-edge is weakened. The technique allows us to obtain ideal characteristics of breakdown voltage. This paper reports the characterization of thus obtained diodes and the investigation of the ion-implantation effect.
