ABSTRACT
GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked GaAs substrates by low pressure metalorganic chemical vapor deposition. Very smooth, featureless morphology and 100 percent selectivity of GaAs have been achieved over a range of growth conditions. Size limitations and electrical activity of these islands have been investigated. FET dc characteristics of fabricated devices on the islands show excellent uniformity of 4 percent over the entire 50 mm diameter wafers, indicating good control of doping-thickness product in the FET channels.
