ABSTRACT
Al.65Ga.35As/GaAs resonant tunneling diodes (RTDs) with asymmetric spacer layers and barrier configurations have been studied via electric and magnetic field measurements. RTDs with an asymmetric barrier configuration exhibit a higher asymmetry in their I-V characteristics than these with asymmetric spacer layers. However, Shubnikov-de Haas (SdH) oscillations obtained from the former are comparable for both bias directions while those from the latter exhibit very high asymmetries. The asymmetric spacer layer RTDs display SdH oscillations only when the diodes are biased in such a way that the thick spacer layer is in the leading edge of the diodes in contrast to the RTD with asymmetric barriers.
