ABSTRACT
The Accumulation Mode Bipolar Transistor is proposed and investigated for the first time. The transistor uses the two dimensional hole gas (2DHG) as an ultra thin base layer, which is accumulated at the AlAs barrier – p− collector interface. The transistor shows the common-emitter current gain of ~30. The theoretical results reveal that by adopting the p− collector rather than the n− collector, and with the higher impurity concentration, the carrier concentration of 2DHG base, the turn-on emitter-base bias, and the punch-through base-collector bias are improved drastically.
