ABSTRACT
Photoluminescence spectroscopy (PL) has been applied as a fast and destruction free method to investigate highly complex AlGaAs/GaAs heterojunction bipolar transistors (HBT) layer sequences. Entire 2″ and 3″ HBT wafers were characterized at 77K. A large variety of parameters could be obtained, e.g. the emitter material composition and the collector doping. PL gives detailed information on the position of the emitter-base and the base-collector interfaces. Comparisons have been made between electrical measurements and PL.
