ABSTRACT
The photoluminescence of SiAs and gallium antisite GaAs related emissions of Si–doped p–type GaAs have been measured as a function of hydrostatic pressure using a diamond anvil cell. The GaAs related emissions have energies of ~1.32 and 1.44 eV at 2 K and are due to the donor–acceptor pair transitions. The pressure coefficients of the binding energy of acceptors responsible for the two transitions are 0.2–0.3 meV/kbar in the direct gap Γ1c − Γ15v region. At pressures larger than the Γ1c − X1c crossover, the emission intensity of the 1.44 eV emission decreases drastically and the half width of the emission increases considerably due to the transfer of electron from the Γ1c minimum to the X1c minimum.
