ABSTRACT
Local structures of GaInP grown on GaAs by OMVPE have been studied by fluorescence-detected EXAFS (extended X-ray absorption fine structure) measurements to discuss the anomaly of energy gap in terms of bond length. The growth temperature dependence of the bond length in ordered GaInP was found. Difference in the EXAFS spectrum shape and the bond length between highly ordered GaInP and impurity-induced disordered GaInP both grown at 700°C was very small. The Debye-Waller factor showed no meaningful variation with growth temperature and ordering.
