ABSTRACT
The changes in the real index of refraction and the optical absorption for conduction intersubband transitions in Al x Ga 1−x As/GaAs/Al x Ga 1−x As quantum wells are examined as a function of the carrier density. Various values for the input optical field and quantum well width are considered in the calculations. The linear contribution due to χ (1) as well as the non-linear contribution from χ (3) is included. The relationship of the results to device applications such as waveguides and optical modulators is discussed.
