ABSTRACT
A monolithic receiver OEIC, composed of an InGaAs PIN photodiode(PD) and a GaAs FET, has been successfully fabricated on 3-inch diameter GaAs substrate using InP-on-GaAs system. The quality of PD layers were improved by buffer layers with low temperature grown layer, thermal cyclic annealing, and InGaAs/InP strained layer superlattice. The receiver OEIC has sensitivity of −28 dBm at transmission rate of 622 Mb/s with a bit error rate of 10−9, and is applicable for practical communication systems.
