ABSTRACT
We have grown a vertically integrated FET/Laser structure for optoelectronic transmitters. It is designed to operate at signal frequencies of several gigahertz. It combines a GaAs/GaAlAs ridge-waveguide laser with a GaAs MESFET driver circuit. The laser has one of its cavity mirrors formed by dry etching so that the the size of the transmitter is not limited to the laser cavity length. The step coverage problems that might result from this vertical integration are avoided by the use of air-bridge connections. The performance of the MESFET (gm = 360 mS/mm), and the laser (Ith = 300 A/cm2) grown by the one-step MOVPE technique will be discussed.
