ABSTRACT
A GaAs/AlGaAs vertical cavity surface-emitting laser (VCSEL) with a graded-index mirror composition has been grown using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The graded compositions were obtained by ramping the reactant gas flows while maintaining a constant growth temperature. The devices have excellent electrical characteristics, including a low series resistance (22 Ω for 30 mm diameter), high overall power efficiency (6%), and low operating voltages. These characteristics are the best results ever reported for MOCVD-grown vertical cavity lasers and are comparable to, or better than, the best MBE-grown devices.
