ABSTRACT
GaInAsSb/GaAlAsSb double-heterojuntion injection lasers emitting at 2.2 μm with 27% Al in the confining layers have been prepared by liquid-phase-epitaxy, with very smooth hetero-interfaces. The best result of the threshold current density J th = 2 KA/cm2 at room temperature was a factor three lower than reported earlier for similar lasers.
