ABSTRACT
Molecular beam epitaxy has been used to grow Ga0.84In0.16As0.14Sb0.86/Al0.75Ga0.25As0.06Sb0.94 double-heterostructure diode lasers emitting at ~ 2.2 μm. The high-Al-content cladding layers provide improved carrier and optical confinement. For broad-stripe devices, the pulsed threshold current density was 0.94 kA/cm2 for a cavity length of 1000 μm. Narrow-stripe devices were operated cw at temperatures up to 30°C, with maximum cw output power at 20°C of 4.6 mW/facet. These values are the best reported for semiconductor lasers emitting beyond 2 μm.
