ABSTRACT
Strained single quantum well, (Al0.2Ga0.8)0.43In0.57P (Δa/a=0.65%), was applied to visible laser diode to obtain short wavelength, low threshold devices. The laser was grown by low pressure OMVPE at 760°C on (100) GaAs substrate. High growth temperature (Tg) was used to grow high quality Al contained active layers. The high Tg also suppressed the formation of natural superlattice and kept the oscillation wavelength short without using off-angle substrates. The continuous wave (CW) oscillation wavelength was 637nm at 25°C for the index guided structure device (5×230um). The threshold current at the temperature was 52mA, which is the lowest value, to our knowledge, for the 630nm range lasers.
