ABSTRACT
Broad spectrum LED’s have become very important for some specific applications like optical sensors and gyroscopes. In this paper we present the fabrication of such LED’s using a special growth technique, called Shadow Masked Growth (SMG). This technique allows a spatial control and change in the thickness of quantum wells over the sample. Using this lateral variation of quantum well thickness, side-emitting single InGaAs quantum well GRINSCH-LED’s were fabricated with a spectral width of already 60 nm. Higher spectral widths were obtained for multi section LED’s.
