ABSTRACT
The incorporation of acceptor and donor impurities in MOCVD and GSMBE InP is investigated using Hall-effect, photoluminescence, magneto-photoluminescence, and photothermal ionization spectroscopy. These samples have 77 K electron concentrations in the range of 5×1013 − 2.8×1015 cm−3 and 77 K mobilities in the range of 38,000 - 300,000 cm2/V-s. The dominant residual acceptor impurity species in the MOCVD and GSMBE samples are Zn and an unidentified species labeled A1, respectively. C is not incorporated as a residual acceptor in InP grown by either of these techniques. Si and S are the dominant donor species detected in MOCVD InP. There is no indication of C donors in the layers that could be measured by either magnetophotoluminescence or photothermal ionization spectroscopy.
