ABSTRACT
The classical drift-diffusion semiconductor model is usually simulated under the assumption of thermal equilibrium, and consists in this case of Poisson’s equation and the current-continuity equation for electrons and/or holes. In this instance, the current densities can usually be expressed as:(ref. [WAC] [COO]) () J → n = μ n n ∇ φ n , J → p = μ p p ∇ φ p https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003072140/faeac70b-e389-4ea4-8b5b-5a836c2a1f73/content/eq552.tif"/>
