ABSTRACT
In this chapter, we have discussed the state-of-the-art technology behind the various methods of field-effect transistor (FET) designing, challenges, and approaching solutions. Here, we have focused on the ideas to continue complementary metal oxide semiconductor (CMOS) scaling by bringing new device structures and new materials. CMOS technology is the main backbone for uninterrupted advance in the semiconductor industry based on silicon over the previous few many years. Till today, scaling in technology has entered the 7-nm regime. But CMOS devices are dealing with design issues, for instance, gate leakage problems, gate thickness, capacitance issues, power consumption issues at a desired current level, and a growth in manufacturing price. This is moving the research direction toward novel nanoelectronic devices, so-called “beyond CMOS devices,” to substitute finally scaled mainstream CMOS devices. The functional acknowledgement of those promising technologies needs broad researches from device to framework design and material level. In this work, the ebb and flow of current research related to the replacement of silicon by new material or using new geometry for silicon-based FET design are reviewed considering various design parameters while providing some desired solutions.
