ABSTRACT
The samples with composition x = 0 and 0.02 of Sr1− x Ba x SnO3 were prepared using sol–gel chemical route preceded by heat treatment at 800°C and 900°C. Using X-ray diffraction (XRD) analysis the crystalline phase of samples was found to be orthorhombic. Because of difference in ionic radii and atomic mass, the lattice parameters, density, and unit cell volume of samples were found to be greater for SBS2 than for SBS0. The absorption spectra of samples indicated an intense absorption below 400 nm and translucent in the visible and NIR (infrared region) region. The optical band gap of samples was determined using Tauc plot, which was found to be 3.88 and 3.97 eV for samples SBS0 and SBS2, respectively, thus reflecting inorganic semiconducting nature of samples. Utilizing absorption state of samples as metastable state makes it a possible candidate for semiconductor devices, UV filters, and UV detector applications. Dielectric constant and tangent loss of samples were investigated as a function of frequency and temperature. The value of the dielectric constant and tangent loss was found to be 44, 50, and (0.30–0.66), (0.10–0.60) for samples SBS0 and SBS2, respectively. The stable dielectric constant and lower value of tangent loss with temperature for the present material render it a suitable candidate for barrier layer capacitor, thermally stable capacitor, and sensor applications.
