ABSTRACT
Findings on analog/RF figures of merit such as transconductance (g m ), total gate capacitance (C gg ), output conductance (g d ), transconductance generation factor (TGF = g m /ID), cut-off frequency (f t ), intrinsic gain (g m /g d ), intrinsic delay (τ), and gain transconductance frequency product (GTFP) for a step-FinFET are reported under variation in temperature through a Technology Computer Aided Design (TCAD) simulator. Furthermore, the linearity parameters such as higher order harmonics (g m 2 and g m 3), voltage intercept points (VIP2 and VIP3), third order power intercept point (IIP3), and third order intermodulation distortion (IMD3) are highlighted taking temperature as a parameter. Moreover, we also discussed the transfer characteristic (in linear and log scale) and current ratio (I ON/I OFF) by changing the temperature from 250 to 450 K with a step of 50 K. The RF as well as analog performance is enhanced, whereas the linearity behaviour is degraded for low values of temperature. Also, the drain current characteristic is degraded in linear and saturation regions as temperature changed from 250 to 450 K.
