ABSTRACT
In the present research, novel, next-generation flexible carbon nanotubes (CNTs) and graphene structures were utilized for the channel nanomaterials used in field effect transistors (FETs). Incorporation of CNTs and graphene in flexible soft electronic devices improves conductivity due to high intrinsic carrier mobility for electrons. These flexible and stretchable semiconductors replace conventional silicon-based semiconductors due to high processibility, mechanical strength, flexibility, and low production cost of the materials. Various methods and strategies for developing improvised CNTs and graphene-based materials were discussed, such as selection of the gate, dielectric, synthesis, applications, source/drain barrier, formation of a conducting flexible mechanical layer, and sensor utility in flexible electronic devices. CNTs and graphene-based FETs can be used for flexible, stretchable, and highly conducting FETs and to realize the functionalities that cannot be achieved with conventional Si-based FETs. It is worth mentioning that there are obstacles to improving the material performance of CNT and graphene-based stretchable electronics, such as reproducibility, ease of fabrication methods, reliability, understanding of material geometry, and their combination process. Experiments have been carried out to understand CNTs, graphene as stretchable electronic devices and their fabrication process, conductivity, sensitivity, and properties used to improve the materials used in soft electronic devices.
