ABSTRACT
This chapter presents an overview of the biosensors with nanowire field-effect transistors (FETs) and single-electron transistors (SETs) as biosensors with nanostructures for high-sensitivity detection and quantification. The materials have a possibility to be used for the fabrications of sensitive organic biosensors with a nanowire FETs or SETs. Biosensors with nanowire FETs fabricated by bottom-up method were realized earlier than those fabricated by the top-down method. Materials other than Si were also used for the bottom-up fabrication of nanowire FET biosensors. Mouse-immunoglobulin G and mouse-immunoglobulin A, target DNA in solution with the probe DNA, and PSA were detected using highly sensitive biosensors with Si nanowire FETs fabricated by using EB lithography. Detection of a single-electron injection to a floating dot with a single-electron memory reminds us of the analogy between dots-on-nanowire memories and highly sensitive biosensors with a nanowire field-effect transistors.
