ABSTRACT
This chapter presents an investigation of interface and dopant disorder in periodic grid-gate quantum dot device. In order to analyze the influence of various disorder mechanisms, we perform self-consistent simulations of the device by solving the three-dimensional Poisson and single- dimensional Schrodinger’s equations for the strong vertical confinement in the dot by taking into account the influence of random structural and doping disorder. The chapter describes the models for interface roughness and dopant disorders and their incorporation into the simulation of the basic device structure. We have simulated the same device with different random distribution of the dopant density in the densely doped regions which also results in fluctuations in the total number of dopants in the 3-doped layers. The effects of periodicity can be accounted for by imposing periodic boundary conditions on the potential of the device unit cell.
