ABSTRACT
Self-assembled InAs/GaAs quantum dots (SAD’s) are three-dimensional (3D) semiconductor nanostructures in which electrons and holes are completely confined along the three dimensions of space by the band gap difference between InAs and GaAs materials. In these nanoscale systems, the determination of the electronic spectra of both particles represents a major challenge because of the low symmetry of the 3D confined nanostructures that take pyramidal or lens shapes and are affected by the strong influence of strain due to the lattice mismatch between the InAs and GaAs crystals. This chapter demonstrates that the linear relation between electric dipole moment and Stark shift is usually violated in SAD’s because of the unique strain field distribution in the dot that strongly influences the rapidly varying confining potential for the holes.
