ABSTRACT
InAs/GaAs self-assembled quantum dots (SAD’s) have attracted considerable interest for the investigation of new physics as well as potential applications in a number of novel devices such as SAD light-emitting diodes and SAD lasers. This chapter makes use of an eight-band strain-dependent k·p Hamiltonian to investigate conduction intraband transitions in stacked double SAD’s. The double InAs SAD system shows much stronger transitions compared with the single dot, as seen at zero field where it is almost three times stronger than in the single dot. The presence of the longitudinal electric field gives us more insight in the effect of conduction-valence band mixing. In double SAD’s, the strong electric-field asymmetry observed for intraband transitions is found for interband transitions, which is due to the asymmetric shape of the system.
