ABSTRACT
Self-assembled InAs/GaAs quantum dots (QDs) have attracted considerable interest for the investigation of new physics as well as potential applications in a number of devices such as QD light emitting diodes and QD laser. This chapter investigates Stark effect in stacked InAs/ GaAs self-assembled double QDs, by using an eight-band strain-dependent k.p Hamiltonian, and concentrates on the electronic states in the conduction band which exhibit profound features in the presence of electric fields. The transition strength in the double QDs exhibits a remarkably asymmetric dependence on the electric field compared with single dots. The enhanced transitions are caused by the variations of the strain field in the coupling region between QDs which mostly affects the upper dot.
