ABSTRACT
Zero-dimensional semiconductor structures, such as InAs/GaAs self-assembled quantum dots have attracted considerable attention because of the new physics of a few electron systems and potential applications in optoelectronics. The QCSE deviates significantly from its quadratic dependence on the electric field. The single dot exhibits a nearly perfect quadratical dependence on the electric field which is referred to the conventional QCSE and has been observed in many other types of quantum structures. The most important point is that the biaxial strain defines two triangular confining potentials in each dot of the stacked structure, while in the single dot the valence band edge profile exhibits a much smoother slope.
