Intraband Absorption in Silicon Nanocrystals: The Combined Effect of Shape and Crystal Orientation

The development of Si based optoelectronics is one of the most pursued technologies, because of its full compatibility with Si microelectronics. In this respect, Si nanostructures are promising candidates because of efficient and visible light-emitting capabilities. With the demonstration of optical gain in Si nanocrystals (NC’s), ¹ the 908development of Si based laser sources may become feasible in the near future.