ABSTRACT
Static Random-Access Memory (SRAM) is the most important component circuit in the very large-scale integration (VLSI) microcontrollers, processors, and other memory devices. The purpose of this circuit is to store bits. The main basic component of this circuit is an SRAM cell. There are numerous works done in the field of designing an efficient SRAM cell. In this review paper, we study various existing SRAM and the techniques used to improve them under FinFET and MOSFET technology. Voltage scaling is a successful procedure for limiting the power consumption of SRAMs. Further, as SRAMs keep on involving a commanding segment of the absolute zone and power in present day ICs, the subsequent all-out power funds are huge. It is very important to design a noise efficient SRAM cell for better performance of the circuit.
