ABSTRACT
This chapter presents an overview of the rapid progress being made in the development of two-dimensional (2-D) transition metal dichalcogenide (TMD) materials. The device with conventional silicon material reaches its scaling limits due to intensive scaling. Hence, 2-D TMD materials-based FET device is gaining attraction because of its larger bandgap, tunable bandgap, high carrier mobility, low OFF current, low power consumption, reduced leakage current, minimized short-channel effect, very high ON/OFF ratio, and outstanding electrostatic control. TMD crystal of MX2 is grouped by M-transition metal element from Group VI materials like Mo, W, and X-chalcogen atoms such as S, Se, or Te. After silicon, graphene has been used as the channel material in the transistor region. However, graphene has zero bandgap, due to which it is difficult to switch off the device that results in high OFF current; thus, the research toward other 2-D materials instead of graphene. This chapter is summarized by the advancements of using 2-D materials as the active channel in transistor devices for low-power applications.
