ABSTRACT
This chapter describes the reasons for the choice of electron beam evaporators, the technical solutions needed to use such sources, and the implications for the growth process. Molecular Beam Epitaxy realizes the simplest principle of synthesizing a crystal. Exploitation of modern vacuum technology and vapor deposition techniques for the synthesis of nearly flawless semiconductor superlattices has been highly successful. "Metallic superlattices" are multilayered materials with several characteristics. The physical properties and growth of metal silicides have been studied intensively for more than a decade. Advances in microfabrication technology have made possible the development of multilayer optical coatings with near-atomic perfection. One measurement that is highly desireable during growth is reflection high energy electron diffraction (RHEED). This surface probe is very sensitive to layering characteristics and can be used to determine a samples growth mode. Oscillations in RHEED patterns during MBE growth of semiconductor materials have been commonly observed for several year.
