ABSTRACT
This chapter concentrates on the epitaxial growth of Si and SiGe in CVDsystems at low temperatures, i.e. between 500 and 750°C, and review associated realisations and remaining problems. An important advantage of LRP/RTCVD machines when performing n-type doping is their temperature flexibility. With respect to p-type doping transitions, Rapid Thermal CVD performs at the same level as Ultra High Vacuum Chemical Vapour Deposition, when low temperatures (625 - 700 °C) are chosen for layer growth. Plasma enhanced chemical vapor deposition is widely used for the deposition of dielectric films such as silicon nitride and silicon oxide. In the photo-CVD process, ultraviolet radiation in used to excite and dissociate the reactant gases non-thermally. The lower pressure permits the use of high vacuum diagnostic techniques such as Reflection High Energy Electron Diffraction (RHEED) to monitor the growth, and low energy ion implantation and Knudsen cell for in-situ doping.
