ABSTRACT
This chapter reviews physical properties, recent developments in growth techniques, and device applications for Silicon-Carbide. Electronic devices with encouraging characteristics have been reported in the last decade, mainly due to developments in Silicon-Carbide growth technique. 3C-SiC has not been used in electronic device application because growth has been limited to the mm diameters possible with sublimation above 2000°C or solution growth using a Si melt in a graphite crucible. Gas source MBE (GSMBE) seems to lower the growth temperature effectively because ultra-high vacuum environments prevent contamination of the sample surface, and the substrate surface can be cleaned at relatively low temperatures. α-SiC, especially 4H- and 6H-SiC show promise for use in developing light-emitting diodes (LEDs). Polycrystalline SiC has been studied for electronic devices because it can be prepared at lower temperatures than single-crystal SiC. High-temperature semiconductor devices are useful for electronic control systems used under harsh environments such as those for automobiles, airplanes, and spacecrafts.
