ABSTRACT
A primary reason for the recent advances in III-N based photonic devices was the demonstration of p-type doping of GaN during MOCVD growth followed by a dehydrogenation anneal to activate the Mg acceptors. In particular the demonstration of selective area implant isolation and doping will allow new III-N based device structures such as lasers and FETs with selectively doped contact regions, planar waveguides created by implant isolation, and implantation tailored current guiding in LEDs and lasers, to name a few. Implant isolation has been widely used in compound semiconductor devices for inter-device isolation such as in transistor circuits or to produce current channeling such as in lasers. The implantation process can compensate the semiconductor layer either by a damage or a chemical mechanism. Selective area ion implantation doping can be used to form highly doped contact regions in lasers and FETs or to create precisely doped transistor channels.
