ABSTRACT
This chapter summarizes the reasons for pursuing the GaN-based materials system for electronic applications. In addition, the development of electronic devices in this system will greatly benefit from the major, world-wide investment in materials development undertaken to support the optical applications of these materials. At low frequencies, high-power electronic devices are intended for use in power transmission and distribution systems, and for motor control applications. At the higher frequency end, there is a continuing demand for higher power, higher efficiency microwave transmitters for both commercial and military applications. Schottky barriers are one of the fundamental building blocks for electronic devices. They are used in Schottky diode rectifiers when fast switching speeds are required. Schottky barriers are also used as the control electrode to modulate the channel current in FETs. JFETs have a potential performance advantage over MESFETs, especially at high temperatures, due to the lower reverse leakage currents of p–n junctions compared to Schottky barriers.
