ABSTRACT
This chapter reviews the status of growth of III-nitrides from both gaseous and elemental techniques. Traditionally, the group III nitrides have been deposited by sputtering or metalorganic chemical vapor deposition. The very high nitrogen overpressures needed during growth complicated their deposition by ultrahigh vacuum techniques, particularly at low temperatures, since the necessarily large quantities of NH3 or similar gases would overwhelm the pumping systems. The use of tertiary amines bonded to silicon, such as tris-trimethyl-silylamine or azides such as trimethylsilylazide would eliminate the N—H bond at the surface. This type of compound also has adequate vapor pressure for epitaxy and is not unusually hazardous. Furthermore, ion channeling and Auger electron analysis both indicate a stoichiometric or slightly nitrogen rich composition. These results suggest that the native defects other than the nitrogen vacancies or impurities are responsible for the residual doping.
