ABSTRACT
The human body is comprised of a huge number of biological cells, and an integrated circuit is comprised of a huge number of transistors. Profoundly scaled metal oxide semiconductor field effect transistors are rendered inadmissible for low-power-control applications because of their thermal point in their switching behavior. Stable voltage scaling, or decreasing the channel length while maintaining high-control supply levels, causes the electric field characteristics in the channel to increase, forcing the charge carriers to accelerate and warm up. There is a tendency for charge carriers to slow down in high electric fields because of the mobility immersion that occurs when the field is high. Nanostructures with high functionality, high device drive, and low power dissipation emerge as a result of device downscaling, which is critical for the advancement of electronics. Higher transconductance increases the electron generation efficiency and reduces the static power dissipation of the device.
