ABSTRACT
In 1928, Lilienfeld filed a patent on a device named as “device for controlling current”, which was later called as metal-oxide semiconductor field-effect transistor (MOSFET). In 1965, Gordon E. Moore published a paper entitled “Cramming More Components onto Integrated Circuits” in Electronics magazine. Scaling of MOSFETs may be defined as the process of reducing the device dimensions and interconnecting wires in such a manner that the functionality of integrated circuits (ICs) does not change. In Spin FETs, the gate is used to regulate the spin direction of charge carriers with the help of Rashba spin–orbit interaction, whereas in spin-MOSFETs, the gate works exactly the same as in conventional MOS devices to switch on/off the current in the channel. In contrast to classical mechanics, particles, such as electrons and holes, are treated as a wave function in quantum mechanics, which penetrate through the potential barrier rather than terminating on a finite potential barrier as considered in classical mechanics.
