ABSTRACT
Analytical modeling of a device is required to fully comprehend the device’s mechanics and to implement the device on a circuit with the fewest errors and flaws possible. Tunnel field effect transistors (TFETs) and metal oxide semiconductor field effect transistors (MOSFETs) have entirely distinct analytical modeling approaches due to differing current conduction processes (i.e., tunneling in TFET vs. thermionic emission in MOSFET). This paper represents the details of the analytical modeling of the surface potential of a heterostructure PNPN TFET with a germanium source and a Si1-xGex pocket in a very simple way. The analysis is carried out by adjusting several parameters of the proposed TFET, such as gate bias, drain bias, body thickness, gate-dielectric thickness, and gate-dielectric materials. Two-dimensional Poisson’s equations are solved using the parabolic approximation approach with various boundary conditions to assess the model equation. For perceiving better accuracy of the proposed model, the depletion regions of source and drain side and the effect of the fringing field are considered in the solution. The modeled results are compared to the simulated outcomes obtained by the Sentaurus TCAD 2-D device simulator, and the results show a high level of consistency.
