ABSTRACT
In distinct typical metal oxide-semiconductor field-effect transistor (MOSFET), the tunnel field-effect transistor (TFET) switching mechanism is accomplished by manipulating the quantum tunnel flowing through the barrier, rather than modifying thermionic emission at the barrier. Silicon-based TFETs have been investigated as electrostatic discharge (ESD) protection devices and proposed for use in ESD protection networks. A forward-biased tunnel diode operates with no net current for electrons on both sides of the junction with equal amount of energy levels. TFET is mainly used for low-power devices, and for its application, we employ band-to-band tunnelling (BTBT). Materials with a higher relative dielectric resistance are utilised to minimise leakage current and enhance productivity. The function of the diode between the source and drain must always be monitored while testing these contact design TFETs to ensure that the source/drain implantation half-masks are aligned.
